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- W2374702912 abstract "Physical model of interface trap for SiO x N y thin film in nanometre range has been studied by means of avalanche hot electron injection. The physical model of interface trap in the thin film which originates from the suspension bond is confirmed. Electron trap of acceptor type, existing in the nanometre film, has been observed. With the increase of avalanche injection, the created electron trap of acceptor type in interface should play a leading role. The D it increased with the injection is discoveried. The densities of upper half part in forbidden band are increased more than that of lower part. It is indicated that two kinds of electron traps with different properties, are generated in the SiO x N y interface during injection. The relationships between the energy levels and density are provided. It is revealed that nanometre film formed by PECVD and the film fabricated by RTN process have different changes in interface trap characteristics, as the nitrogen and oxygen contents are different. The physical explanation is supplied. The process condition of the PECVD in nanometre film is optimized. The thin film formed by the optimized condition possess better interface trap characteristic and other good physical and electrical characteristics." @default.
- W2374702912 created "2016-06-24" @default.
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- W2374702912 date "2002-01-01" @default.
- W2374702912 modified "2023-09-25" @default.
- W2374702912 title "Physical Model of Interface Trap for Thin Film in Nanometre Range Formed by PECVD" @default.
- W2374702912 hasPublicationYear "2002" @default.
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