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- W2374901680 abstract "Short-channel MOSFETs with asymmetric interfacial oxide layer was designed to improve device performance.A relatively thick interfacial oxide layer in source side was used to alleviate device performance deterioration due to mobility degradation.In the meantime,a relatively thin interfacial oxide layer in drain side allowed good control of short channel effects(SCE).TCAD simulation showed that the asymmetric structures had better Ion-Ioff characteristics than symmetric structures.Optimal percentages of thick asymmetric interfacial oxide layers were found to be about 15% to maximize device performance.Drive current of the optimized asymmetric structures was improved by 5%to 15%at various Iofflevels,compared with that of symmetric structures." @default.
- W2374901680 created "2016-06-24" @default.
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- W2374901680 date "2014-01-01" @default.
- W2374901680 modified "2023-09-23" @default.
- W2374901680 title "Further EOT Scaling for MOSFET with Asymmetric Interfacial Oxide Layer" @default.
- W2374901680 hasPublicationYear "2014" @default.
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