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- W2375876871 abstract "Si(100) samples were implanted with low energy As + ions at different incident angles and followed by rapid thermal annealing. The defects in Si(100) were measured by Doppler broadening of positron annihilation. The distribution of defects is solved by simulating a one dimensional diffusion equation. The density of defects produced by 15. implantation of As + is higher than that by 60° implantation, and the types of defects are different. The defects produced by 15°implantation can be eliminated effectively by rapid thermal annealing." @default.
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- W2375876871 date "1998-01-01" @default.
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- W2375876871 title "Investigation of defects produced by low energy As" @default.
- W2375876871 hasPublicationYear "1998" @default.
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