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- W2375985072 abstract "The structure of unintentionally doped GaN grown by organometallic vapor phase epitaxy on Al2O3 substrates was investigated using Rutherford Backscattering and Ion Channeling measurements. The growth of unintentionally doped GaN films was performed by MOCVD method using a home-made vertical reactor operating at atmospheric pressure. The grwoth was carried out on (0001 ) oriented sapphire substrates using Trimethylgallium (TMGa) and blue-ammonia (NH3) as Ga and N sources, respectively. The mixed gases of hydrogen and nitropen were used as the damer gases. A thin buffer layer with thickness of about 15um was grown at 520t and recrystallized at 1 060℃ for 6 minutes. The GaN films were grown at 1 060℃. Rutherfold Backscattering and Channeling spectra were measured with 2 .0meV He+ ions at a scattering angle of 165°.The ion channeling minimum yields in the near-surface region (the ratio of the backscattered yield along the random direction to that of the aligned, Xmin) for four samples were 1. 43 %, 2. 13 %, 2. 22 % and 29. 8 %, respectively. The electrical properties of those films were measured by Van der Pauw Hall method, and their compensation ratio were 0. 45, 0. 6, 0. 83 and 0. 9, respectively. The results indicats that there existed some relationship between Xmin and the compensation ratio, and the relation was unambiguous for thin films. The value of Xmin was small in GaN with light compensation ratio, while it was large in GaN with heavy compensation ratio, but the growth in value Of Xmin with increasing of compensation ratios was seen to be nonlinear. The experimental results were analyzed as following: high compensation suggested that there were many acceptor impurities or defects in epitaxial films of GaN. When those acceptor impurities or defects were interstitial, the incident He+ ions would endure great scattering so that the channeled yields would increase remarkably. But as for thick epitaxial film, most part of defects were located near the interface between film and substrate, so it was possible that the crystalline quality near the film surface would be improved. In this case, the growth of compensation didn' t result in alarge increment of Xmin. However, in the thin films with heavy compensation, some cases were different. The acceptor impurities or defects were to be distributed over the whole epitaxial film, and near surface there still existed many impurites or defects, therefore, the value of Xmin would increase greatly." @default.
- W2375985072 created "2016-06-24" @default.
- W2375985072 creator A5044594500 @default.
- W2375985072 date "2000-01-01" @default.
- W2375985072 modified "2023-09-23" @default.
- W2375985072 title "Relationship between Compensation and Ion Channeling Minimum Yield in GaN" @default.
- W2375985072 hasPublicationYear "2000" @default.
- W2375985072 type Work @default.
- W2375985072 sameAs 2375985072 @default.
- W2375985072 citedByCount "0" @default.
- W2375985072 crossrefType "journal-article" @default.
- W2375985072 hasAuthorship W2375985072A5044594500 @default.
- W2375985072 hasConcept C110738630 @default.
- W2375985072 hasConcept C113196181 @default.
- W2375985072 hasConcept C115260700 @default.
- W2375985072 hasConcept C120665830 @default.
- W2375985072 hasConcept C121332964 @default.
- W2375985072 hasConcept C134112204 @default.
- W2375985072 hasConcept C145148216 @default.
- W2375985072 hasConcept C171250308 @default.
- W2375985072 hasConcept C175665537 @default.
- W2375985072 hasConcept C178790620 @default.
- W2375985072 hasConcept C185592680 @default.
- W2375985072 hasConcept C19067145 @default.
- W2375985072 hasConcept C192562407 @default.
- W2375985072 hasConcept C2779227376 @default.
- W2375985072 hasConcept C2779668472 @default.
- W2375985072 hasConcept C2780064504 @default.
- W2375985072 hasConcept C43617362 @default.
- W2375985072 hasConcept C49040817 @default.
- W2375985072 hasConcept C512968161 @default.
- W2375985072 hasConcept C520434653 @default.
- W2375985072 hasConcept C57863236 @default.
- W2375985072 hasConcept C62520636 @default.
- W2375985072 hasConcept C85443114 @default.
- W2375985072 hasConceptScore W2375985072C110738630 @default.
- W2375985072 hasConceptScore W2375985072C113196181 @default.
- W2375985072 hasConceptScore W2375985072C115260700 @default.
- W2375985072 hasConceptScore W2375985072C120665830 @default.
- W2375985072 hasConceptScore W2375985072C121332964 @default.
- W2375985072 hasConceptScore W2375985072C134112204 @default.
- W2375985072 hasConceptScore W2375985072C145148216 @default.
- W2375985072 hasConceptScore W2375985072C171250308 @default.
- W2375985072 hasConceptScore W2375985072C175665537 @default.
- W2375985072 hasConceptScore W2375985072C178790620 @default.
- W2375985072 hasConceptScore W2375985072C185592680 @default.
- W2375985072 hasConceptScore W2375985072C19067145 @default.
- W2375985072 hasConceptScore W2375985072C192562407 @default.
- W2375985072 hasConceptScore W2375985072C2779227376 @default.
- W2375985072 hasConceptScore W2375985072C2779668472 @default.
- W2375985072 hasConceptScore W2375985072C2780064504 @default.
- W2375985072 hasConceptScore W2375985072C43617362 @default.
- W2375985072 hasConceptScore W2375985072C49040817 @default.
- W2375985072 hasConceptScore W2375985072C512968161 @default.
- W2375985072 hasConceptScore W2375985072C520434653 @default.
- W2375985072 hasConceptScore W2375985072C57863236 @default.
- W2375985072 hasConceptScore W2375985072C62520636 @default.
- W2375985072 hasConceptScore W2375985072C85443114 @default.
- W2375985072 hasOpenAccess W2375985072 @default.
- W2375985072 hasRelatedWork W1974508219 @default.
- W2375985072 hasRelatedWork W1995818592 @default.
- W2375985072 hasRelatedWork W2001034009 @default.
- W2375985072 hasRelatedWork W2002129535 @default.
- W2375985072 hasRelatedWork W2003785873 @default.
- W2375985072 hasRelatedWork W2010354468 @default.
- W2375985072 hasRelatedWork W2013433851 @default.
- W2375985072 hasRelatedWork W2019386852 @default.
- W2375985072 hasRelatedWork W2027538681 @default.
- W2375985072 hasRelatedWork W2031626140 @default.
- W2375985072 hasRelatedWork W2048202617 @default.
- W2375985072 hasRelatedWork W2059988411 @default.
- W2375985072 hasRelatedWork W2067841563 @default.
- W2375985072 hasRelatedWork W2081390902 @default.
- W2375985072 hasRelatedWork W2082498212 @default.
- W2375985072 hasRelatedWork W2084425804 @default.
- W2375985072 hasRelatedWork W2362402864 @default.
- W2375985072 hasRelatedWork W2363158769 @default.
- W2375985072 hasRelatedWork W3170673621 @default.
- W2375985072 hasRelatedWork W3197718256 @default.
- W2375985072 isParatext "false" @default.
- W2375985072 isRetracted "false" @default.
- W2375985072 magId "2375985072" @default.
- W2375985072 workType "article" @default.