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- W2376042014 abstract "Si_(1-x)Ge_x/Si heterostructure was prepared by implanting 5.3×10~(16)/cm~2 of Ge~+ into (001) separation by implanted oxygen(SIMOX) wafers of silicon at 100 keV and annealed at 7001050 ℃ for 530 min. The X-ray diffraction data of crystal planes (004) and (113) of samples show that good annealing effect may be attained at 1000 ℃ for 30 min. If we assume that solid phase growth epitaxial (SPEG) is pseudomorphic growth, and 90% of implanted Ge~+ is situated in the substitution site, this percentage is corrected to 82% of theoretical value when considering strain relaxation, and the coherent factor is 0.438. The quality of crystallized film is not perfect enough owing to the serious damage of crystal lattice produced by a high dose of Ge~+ implantation and dislocation and defect released by strain relaxation." @default.
- W2376042014 created "2016-06-24" @default.
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- W2376042014 date "2005-01-01" @default.
- W2376042014 modified "2023-09-23" @default.
- W2376042014 title "Annealing behavior of Si_(1-x)Ge_x/Si heterostructure formed by Ge~+ implantation with X-ray diffraction" @default.
- W2376042014 hasPublicationYear "2005" @default.
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