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- W2376047552 abstract "The effects of photolithography on substrates with photoresist of some different branched or line polysilanes and planar-layer of polyurethane resin or alkyd resin, which were irradiated by 308nm XeCl excimer laser, were discussed. Considering bad compatibility with other polymers, the photolithographic experiments were performed after polysilane containing chlorine was added into branched polysilane as addition. The patterns of equi-spaced light and shade line with the least resolution of 0.5μm could be obtained. Optimizations of properties of the formulae were attempted by using various polysilanes as additions mutually. Many factors, which may have effects on the qualities of the transferred patterns, were discussed qualitatively." @default.
- W2376047552 created "2016-06-24" @default.
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- W2376047552 date "2002-01-01" @default.
- W2376047552 modified "2023-09-25" @default.
- W2376047552 title "The Study on the Photolithographic Effect of Using Polysilane As Photoresist for Uv Submicron Photolithography" @default.
- W2376047552 hasPublicationYear "2002" @default.
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