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- W2376639524 abstract "A novel semiconductor material (InGaNAs) is introduced detailly as well as its trait of growth and advantage in manufacturing the devices such as long wavelength quantum well laser with high characteristic temperature, long wavelength vertical cavity surface emission laser (VCSEL), long wavelength light-pumped vertical external cavity surface emission laser (LP-VECSEL), semiconductor saturable absorption mirror (SESAM) and long wavelength resonant cavity enhance photo detector (RCE-PD)." @default.
- W2376639524 created "2016-06-24" @default.
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- W2376639524 date "2003-01-01" @default.
- W2376639524 modified "2023-09-23" @default.
- W2376639524 title "Growth and Application of Novel Material: InGaNAs" @default.
- W2376639524 hasPublicationYear "2003" @default.
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