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- W2376802010 abstract "Fabrication of high performance platinum/Oxynitride/silicon (MOS) Schottky diode is presented. Direct oxidation in NO gas is successfully applied for the insulator. The interface properties of device have been improved due to nitrogen incorporation in the insulator. A rapid and stable response upon the introduction and removal of H_2/N_2 mixed gas can be realized for the sensor. It has excellent response characteristics and high recoveries. And Tens-ppm of hydrogen can be detected. So direct oxidation in NO gas for insulator is an effect technology to fabricate high reliability and high sensitivity MOS Schottky diode hydrogen gas sensor." @default.
- W2376802010 created "2016-06-24" @default.
- W2376802010 creator A5021518599 @default.
- W2376802010 date "2004-01-01" @default.
- W2376802010 modified "2023-09-25" @default.
- W2376802010 title "High Performance of Si-based Schottky Diode Hydrogen Sensor" @default.
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