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- W2377517111 abstract "This work reports the measurement of the nano-scale physical properties of surface vacancies and the extraction of the types and concentrations of dopant atoms and point defects inside compound semiconductors, primarily by cross-sectional scanning tunneling microscopy on cleavage surfaces of III–V semiconductors. The results provide the basis to determine the physical mechanisms governing the interactions, the formation, the electronic properties, and the compensation effects of surface as well as bulk point defects and dopant atoms." @default.
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- W2377517111 date "2002-07-01" @default.
- W2377517111 modified "2023-09-27" @default.
- W2377517111 title "Defects in III-V semiconductor surfaces" @default.
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- W2377517111 doi "https://doi.org/10.1007/s003390101059" @default.
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