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- W2377894021 abstract "The Al-doped ZnO(AZO) thin films with different ZnO buffer layer thickness are deposited on ZnO buffer layer by reactive RF magnetron sputtering technology.The microstructure,surface morphology,luminescence properties of the AZO thin films are characterized by X-ray diffraction(XRD),scanning electron microscopy(SEM),UV-VIS spectrophotometer and photoluminescence(PL) spectrum,respectively.XRD measurements reveal that ZnO buffer layer at low temperature can reduce the lattice distortion caused by lattice misfit and difference of the thermal expansion coefficients.The transmittance first increase and then decrease with increasing ZnO buffer layer thickness and the AZO films show the average transmittance above 80% in the visible range.The PL spectra peak value of the sample which have ZnO buffer layer increases obviously at room temperature.The crystal quality and optical properties of the AZO thin film are improved significantly." @default.
- W2377894021 created "2016-06-24" @default.
- W2377894021 creator A5068880228 @default.
- W2377894021 date "2011-01-01" @default.
- W2377894021 modified "2023-09-24" @default.
- W2377894021 title "Effects of ZnO buffer layer thickness on the properties of Al doped ZnO thin films" @default.
- W2377894021 hasPublicationYear "2011" @default.
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