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- W2377925315 abstract "Transparent conducting Si doped ZnO thin films were fabricated on glass substrates at room temperature by direct current magnetron sputtering.The effect of sputtering powers on structure,morphology,optical and electrical properties of ZnO∶Si thin films were investigated when other deposition conditions were kept unchanged.The results showed that sputtering powers have a significant impact on the growth rate,crystal quality and electrical properties of ZnO∶Si thin films,but have less impact on its optical properties.Thin films prepared possess polycrystalline hexagonal wurtzite structure with preferred orientation of(002) along the c-axis perpendicular to the substrate.As the sputtering power increases from 45 W to 105 W,the degree of crystallization of the films increases,the grain size increases and the film resistivity decreases.When the sputtering pressure,deposition time and target substrate distance are5.0 Pa,20 min and 60 mm,respectively,and are kept unchanged,the lowest resistivity of 3.83 × 10-4Ω· cm(sheet resistance=6.7 Ω /□ for thickness 571.3 nm) is achieved at the direct current sputtering power 105 W and optical transmission is 94.41%.The ZnO∶Si thin films prepared can be used as the transparent electrode of the thin film solar cells or liquid crystal displays." @default.
- W2377925315 created "2016-06-24" @default.
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- W2377925315 date "2013-01-01" @default.
- W2377925315 modified "2023-09-24" @default.
- W2377925315 title "Effect of Sputtering Power on the Properties of Si Doped ZnO Transparent Conductive Films" @default.
- W2377925315 hasPublicationYear "2013" @default.
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