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- W2378020904 abstract "Taking process defects into account,the device lifetime under dc and pulse dc stresses are discussed.Based on the analysis,a new model of interconnect lifetime is presented to estimate the variation in the interconnect lifetime when considering the defects,which is helpful to the IC design.The simulation results prove the model valid." @default.
- W2378020904 created "2016-06-24" @default.
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- W2378020904 date "2001-01-01" @default.
- W2378020904 modified "2023-09-25" @default.
- W2378020904 title "Reliability Model of IC Interconnect Based on Defect Distribution Statistics" @default.
- W2378020904 hasPublicationYear "2001" @default.
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