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- W2378503290 abstract "MOS device in space low-dose radiation response can be predicted by using linear system theory techniques. According to the prediction result, under same bias conditions during radiation and anneal, the threshold-voltage shifts caused by high dose-rate irradiations following room temperature anneal were equal to that of low-dose-rate irradiations within the limits of error, but both total times were same. On the other hand, we re-evaluated the method 1019.4 test procedure. And some advice on evaluating the oxide trapped charge and interface trapped charge effect are given." @default.
- W2378503290 created "2016-06-24" @default.
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- W2378503290 date "2004-01-01" @default.
- W2378503290 modified "2023-09-27" @default.
- W2378503290 title "Research on simulation method of space low-dose-rate radiation response" @default.
- W2378503290 hasPublicationYear "2004" @default.
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