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- W2378638894 abstract "A series of P-type a-Si:H films with different flow rates of borane were prepared by a plasma enhanced chemical vapor deposition method.The influence of boron-doping amount on the microstructures and properties of a-Si:H films was analyzed.The P-type a-Si:H film with the optimal boron-doped amount was annealed in vacuum so as to investigate the influence of the film crystal structure change on the properties.The results indicate that with the increase of boron-doping amount,the microstructures of P type a-Si:H films have no substantial change,and the band gaps and electrical properties appear varying.The optimum boron-doping amount was proven to be 1.0%.The band gap of a-Si:H film decreased from 1.81 to 1.72 eV and the conductivity increased by 3 orders of magnitude after annealing.The crystal structure of film could improve the electrical properties rather than the boron-doping ratio." @default.
- W2378638894 created "2016-06-24" @default.
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- W2378638894 date "2013-01-01" @default.
- W2378638894 modified "2023-09-24" @default.
- W2378638894 title "Influcence of Boron-doping Amount on Microstructure,Optical and Electrical Properties of P-Type a-Si:H Films" @default.
- W2378638894 hasPublicationYear "2013" @default.
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