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- W2380015740 abstract "InP is being used as a platform for a wide variety of fiber communications components,including lasers, LEDs, semiconductor optical amplifiers, modulators and photo-detectors. In recentyears, we have developed a high quality 100mm S-doped InP single crystal growth using the HP-LECmethod after P-injection direct synthesis polycrystalline. Crystalline perfection of f 100mm InP wasstudied by etch pit density (EPD) measurement of 100wafers. The measured average EPD of 100mmS-doped substrates could be reduced to less than 5×104cm-2. The carrier concentration of the S-doped InP is over3×1018cm-3. Controlling the angle of the early stage 70°~180° will avoid the twinof the large diameter of InP crystal." @default.
- W2380015740 created "2016-06-24" @default.
- W2380015740 creator A5005993700 @default.
- W2380015740 date "2004-01-01" @default.
- W2380015740 modified "2023-09-24" @default.
- W2380015740 title "The study of Φ100mm sulfur doped InP single crystal growth" @default.
- W2380015740 hasPublicationYear "2004" @default.
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