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- W2380172278 abstract "The ionizing irradiation response of unhardened PMOSFET which is manufactured in China at different dose-rates,and the annealing effect at higher dose-rates have been investigated.The results have shown that the threshold voltage shift following the higher dose-rates irradiation plus anneal can't match that obtained at the lower dose-rate for PMOS,so the ionizing radiation response of PMOS isn't time dependent effect,but enhanced low dose rate irradiation damage." @default.
- W2380172278 created "2016-06-24" @default.
- W2380172278 creator A5051258646 @default.
- W2380172278 date "2009-01-01" @default.
- W2380172278 modified "2023-10-16" @default.
- W2380172278 title "PMOSFET's Enhanced Low Dose Rate Irradiation Damage" @default.
- W2380172278 hasPublicationYear "2009" @default.
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