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- W2380453617 abstract "The elastic strain regions of the boron-doped silicon free-handing Si diaphragm and the heteroepitaxial GaN layer grown on the sapphire substrate of a LED were measured by electron backscattering diffraction(EBSD).The strain sensitive parameters as Image qualities(IQ),the Hough transforms of the Kikuchi lines,as well as the small angle misorientation were used to evaluate the lattice distortion and the local elastic strain fields of the single crystals system at micron to submicron regions.The elastic stress distribution of the window region of the Si-membrane and the GaN epilayers in LED were obtained by EBSD." @default.
- W2380453617 created "2016-06-24" @default.
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- W2380453617 date "2006-01-01" @default.
- W2380453617 modified "2023-09-25" @default.
- W2380453617 title "EBSD analysis of local elastic strain fields in semiconductor structures" @default.
- W2380453617 hasPublicationYear "2006" @default.
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