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- W2380459099 abstract "Integrated pyramidal pits used as molds are formed on 100 oriented silicon wafer by anisotropic etching. A film of silicon nitride with a thickness about 1 μm is deposited by means of LPCVD and PECVD method. Cantilever is mapped on the film of the silicon nitride by plasma etching. A polished glass chip is electrostatically bonded on the mapped film of the silicon nitride. After the substrate silicon has been etched away the silicon nitride cantilever with a pyramidal tip is exposed, which serves as a nanoprobe for mapping nanoimage by using the atomic force microscope (AFM). A further discussion is conducted on the shapeless of the tip and the compensation of the thermal stress of the silicon nitride cantilever. A new special and efficiant design of the cantilever mask is presented. A nanoimage is successfully mapped by using the above nanoprobe on the atomic force microscope (AFM).The accuracy of the deflection on Z direction measured is better than grade of 10 -9 m." @default.
- W2380459099 created "2016-06-24" @default.
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- W2380459099 date "2006-01-01" @default.
- W2380459099 modified "2023-09-23" @default.
- W2380459099 title "Microfabrication of Si_3N_4 Nanoprobe for AFM" @default.
- W2380459099 hasPublicationYear "2006" @default.
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