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- W2380798507 abstract "ZnO thin films was deposited on Si(100) substrates by PLD. Structural properties was then valued by X-ray diffraction and X-ray rocking curve to show that the ZnO films was high crystallinityand had a very strong preferred orientation along the c axis. STM was employed to analyze the microarea piezoelectric property. The piezoelectric constant of ZnO thin films is 13.8pm/V. The relationship of microarea piezoelectric property and the polar growth of ZnO films was discussed. It is indicated that the (0001)Zn face is easy growth in the ZnO films growth process." @default.
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- W2380798507 date "2005-01-01" @default.
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- W2380798507 title "A Study on Microarea Pezoelectric of Preferred c-orientation ZnO Thin Films" @default.
- W2380798507 hasPublicationYear "2005" @default.
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