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- W23808948 abstract "I ncreasing op erating freq uencies of S IS rec eivers requires junctions that can operate at h igher current densities. A major limit ing factor of h igher cu rrent d ensity ju nctions is the in crease in subgap leak age th at occu rs in AlOX b arriers as current d ensities ap proach an d exceed 10k A/cm 2 . AlN insulators are a promising alternative due to their lower leakage current at these high current densities. In this paper we present a more detailed analysis of the formation of AlN b arriers using our pr eviously r eported induc tively c oupled plasma (I CP) source gro wth tech nique. Th e I CP allow s for in dependent control of ion en ergy an d cu rrent d ensity in th e p lasma. Additionally, plasmas w ith very lo w ion energy (~20eV) and a high degree o f dissociation (~80% ) can be achiev ed. T his improved con trol al lows for the rep eatable formation of h igh quality barr iers. In par ticular, we report on the r elationship between barrier thickness and plasma c onditions as determined by in -situ d iscrete el lipsometry. Ell ipsometry results were verified by fabr icating Nb/Al- AlN/Nb ju nctions a nd me asuring current-voltage, I (V), cu rves. d c I (V) cu rves for a ran ge of current densities are presented." @default.
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- W23808948 date "2008-04-01" @default.
- W23808948 modified "2023-09-26" @default.
- W23808948 title "Formation of High Quality AlN Tunnel Barriers via an Inductively Couple Plasma" @default.
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