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- W2381609367 abstract "In this work,we use reactive ion etching(RIE)for fabricating InSb mesa with CH4/H2/Ar plasma.We report on etch-induced damage in InSb caused by plasma,and a method for its reduction by means of wet etching.A postwet etching of the dry-etched samples effectively reduced the etch-induced defects and damage,leading to improved electrical properties in the etched InSb mesa." @default.
- W2381609367 created "2016-06-24" @default.
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- W2381609367 date "2010-01-01" @default.
- W2381609367 modified "2023-09-24" @default.
- W2381609367 title "Study on reactive ion etching damage of InSb wafer" @default.
- W2381609367 hasPublicationYear "2010" @default.
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