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- W2381766433 abstract "To obtain novel SOI (Silicon On Insulator)with buried CeO 2 ,the electron evaporated depo -sition and the post annealing were used.And high orientated(111),(311)CeO 2 film was obtained.The film provides the substrate for t he following silicon epitaxy.The me chanism of high orientation induced by the post annealing is disc ussed.The(111),(311)crystal planes are the close -packed and next -close -packed crystal plan e respectively,they only need the lo west energy to conquer the energy barrier when the CeO 2 thin film is crystallized.Thus the a nnealing induces the formation of(111),(311)CeO 2 thin film." @default.
- W2381766433 created "2016-06-24" @default.
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- W2381766433 date "2004-01-01" @default.
- W2381766433 modified "2023-09-25" @default.
- W2381766433 title "Fabrication of highly orientated CeO_2 thin film by electron beam evaporation deposition" @default.
- W2381766433 hasPublicationYear "2004" @default.
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