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- W2381773525 abstract "Pd/SnO_2/SiO_2/Si thin films, deposited by magnetron sputtering, were used to fabricate micro-gas sensors. Effects of heat-treatment on micro-structures and surface morphology were studied. Moreover, the gas-sensing characteristics were also measured. Pd/SnO_2/SiO_2/Si multi-layer structure is formed in annealing condition,and the thickness of SiO_2 layer increases from 3nm to 50nm. Polycrystalline tetragonal SnO_2 with the porous structure is showed in the period of annealing. The sensitivity measurements show that both of the as-deposited thin films and the annealed thin films had a strong gas-sensing properties to H_2、CH_4、CO and C_2H_5OH in low operating temperature. With the increasing of hydrogen gas concentration in the range of 100~6 000 ppm(ppm=10~ -6 ), the sensitivity of annealed Pd/SnO_2/SiO_2/Si thin films increased from 35 to 73.5." @default.
- W2381773525 created "2016-06-24" @default.
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- W2381773525 date "2006-01-01" @default.
- W2381773525 modified "2023-09-25" @default.
- W2381773525 title "Gas-Sensing Properties and Structure of Pd/SnO_2/SiO_2/Si Integrated Thin Films" @default.
- W2381773525 hasPublicationYear "2006" @default.
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