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- W2381777732 abstract "Low temperature liquid phase epitaxy of silicon thin films with Au/Bi melt as source materials is succcssfully carried out at 400℃～500℃. Si-saturated Sn solution is used to protect the substrate surface, so as to prevent it from being oxidized. The morphologies of Si epitaxy thin films and carrier concentration hear its junction are observe and measured by means of SEM, X - ray, AES and C -V measurements." @default.
- W2381777732 created "2016-06-24" @default.
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- W2381777732 date "1998-01-01" @default.
- W2381777732 modified "2023-09-25" @default.
- W2381777732 title "Silicon film preparation by liquid phase epitaxy at low temperature" @default.
- W2381777732 hasPublicationYear "1998" @default.
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