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- W2382245680 abstract "CdSe TFT was prepared with evaporation and sputtering processes. It was observed that the I-V characteristics of TFT were improved when In was doped into CdSe. The result was explained by the dopant theory of semiconductor." @default.
- W2382245680 created "2016-06-24" @default.
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- W2382245680 date "2000-01-01" @default.
- W2382245680 modified "2023-09-28" @default.
- W2382245680 title "Effect of Dopant on the Stability of CdSe TFT Performance" @default.
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