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- W2382573386 abstract "摘要 K吸附层的存在能促进GaAs(100)表面在室温下的氮化.光电发射测量为此提供了证据.在将K/GaAs(100)暴露于纯氮以后，价带和芯能级谱均会出现显著变化：功函数有一定程度回升，价带谱中显露N2p峰，Ga2p和As2p芯能级谱中产生化学位移分量.就所研究的三种不同的K覆盖度(1/4，1/2和1ML)而言，1ML的那种显示了最强的促进作用. Abstract Presence of a K adlayer will promote nitridation of GaAs(100) surfaces at room temperature, as is evidenced by photoemission measurements. Following exposure of K/GaAs to pure nitrogen, there appear remarkable variations in both valence band and core level spectra, i.e., recovery of work function to a certain extent, emergence of the N2p peak in the valence band spectra and creation of chemically shifted Ga2p and As2p components in the core level spectra. For the three different K coverages we studied (1/4, 1/2 and 1ML), the 1ML one shows the strongest promotion effect. 作者及机构信息 胡海天, 来 冰, 袁泽亮, 丁训民, 侯晓远 1. 复旦大学应用表面物理国家重点实验室，上海 200433 基金项目: 国家自然科学基金和上海市科学技术委员会资助的课题. Authors and contacts HU HAI-TIAN, LAI BING, YUAN ZE-LIANG, DING XUN-MIN, HOU XIAO-YUAN 1. 复旦大学应用表面物理国家重点实验室，上海 200433 参考文献 施引文献" @default.
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- W2382573386 date "1998-01-01" @default.
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- W2382573386 title "NITRIDATION OF K/GaAs(100) SURFACES" @default.
- W2382573386 doi "https://doi.org/10.7498/aps.47.1041" @default.
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