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- W2382889103 abstract "Higher-κ dielectric LaLuO3, deposited by molecular beam deposition, with TiN as gate stack is integrated into high-mobility Si/SiGe/SOI quantum-well p-type metal-oxide-semiconductor field effect transistors. Threshold voltage shift and capacitance equivalent thickness shrink are observed, resulting from oxygen scavenging effect in LaLuO3 with Ti-rich TiN after high temperature annealing. The mechanism of oxygen scavenging and its potential for resistive memory applications are analyzed and discussed." @default.
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- W2382889103 date "2016-05-01" @default.
- W2382889103 modified "2023-09-27" @default.
- W2382889103 title "Oxygen Scavenging Effect of LaLuO 3 /TiN Gate Stack in High-Mobility Si/SiGe/SOI Quantum-Well Transistors" @default.
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- W2382889103 doi "https://doi.org/10.1088/0256-307x/33/5/057701" @default.
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