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- W2383225936 abstract "Conventional and LDD structured NMOSFET were fabricated. Results of simulation and practical measurement indicated that, if the device structure is appropriately designed to limit the value of I off in a acceptable range, MOSFET working in a carefully defined and relatively lowered voltage region will have better performance and smaller hot carrier effect than those of LDD MOSFET with same channel length. Meanwhile, one can get the advantage of the conventional structure with less area and reduced working power dissipation. It was shown that, the conclusion is true even for MOSFET with channel lengths of 0.5μn and 0.35μm, which are now in mass production using LDD structure." @default.
- W2383225936 created "2016-06-24" @default.
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- W2383225936 date "1999-01-01" @default.
- W2383225936 modified "2023-09-23" @default.
- W2383225936 title "Performance of submicron and deep submicron conventional/LDD MOSFET" @default.
- W2383225936 hasPublicationYear "1999" @default.
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