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- W2383541421 abstract "By making use of the back scattering method Si, GaAs and LiNbO3 Single Crystal blocking patterns were obtained and GaAs single crystal {110}, {100} and {112} plane blocking halfangle φ1/2 values were estimated. We have found that the depth of the {110} plane blocking dip of Si slice damaged due to ion implanting becomes shallow when implantation dose increases. In order to check the experimental apparatus and the method, we have also obtained Si single crystal blocking pattern and measured the values of Si single crystal {110}, {111} and {100} crystal plane blocking halfangles" @default.
- W2383541421 created "2016-06-24" @default.
- W2383541421 creator A5001344825 @default.
- W2383541421 date "1979-01-01" @default.
- W2383541421 modified "2023-09-25" @default.
- W2383541421 title "THE BLOCKING EFFECT OF Si, GaAs AND LiNbO_3 SINGLE CRYSTALS" @default.
- W2383541421 hasPublicationYear "1979" @default.
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