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- W2384082649 abstract "Al films, grown on Si wafers by DC magnetron sputtering, were studied with X-ray diffraction and optical phase-shift technology at different Ar pressures. The results of microstructure analysis show that the Al films consist of face-centered cubic(FCC) Al grains. Comparing the Al films sputtered at different Ar pressures, it is found that the crystallization of the Al films whose Ar pressure is (1 Pa is) better than the others, and the mean grain size of the Al films whose Ar pressure is (1 Pa is) bigger than that of which pressure of Ar is 3 Pa. When the pressure of Ar is 1 Pa, the mean grain size of the Al film increases from 17.9 nm to 26.3nm, and the lattice constant of the Al film increases from 0.403 7 nm to 0.404 7 nm, with the thicknesses of the Al film increasing. The results of stress analysis show that at the same Ar pressure, the average stress of the Al films becomes smaller and the distribution of the stress becomes more uniform with the thickness of the Al film increasing. Comparing the Al films deposited at different Ar pressures and the same sputtering time, it is concluded that the stress status of the Al films grown at Ar pressure of 1 Pa is better than the others." @default.
- W2384082649 created "2016-06-24" @default.
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- W2384082649 date "2004-01-01" @default.
- W2384082649 modified "2023-09-25" @default.
- W2384082649 title "Effect of Ar pressure and film thickness on the microstructure and stress properties of Al films" @default.
- W2384082649 hasPublicationYear "2004" @default.
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