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- W2384277923 abstract "A nondestructive method for measuring the thickness of the semiconductor material of 4H-SiC epitaxial layer by stacking faults was introduced.It is based on the characteristic of the relationship between the size of stacking faults (SF) and the thickness of epitaxial layer.The thickness of epitaxial layer can be calculated through measuring the length of SF at [1100] direction which is obtained by the field emission scanning electron microscopy.Compared to the infrared interference conventional measurement method of epitaxial layer thickness,such as infrared interference,this nondestructive measurement method is much more available and precise." @default.
- W2384277923 created "2016-06-24" @default.
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- W2384277923 date "2010-01-01" @default.
- W2384277923 modified "2023-09-23" @default.
- W2384277923 title "NONDESTRUCTIVE METHOD FOR MEASURING THE THICKNESS OF 4H-SiC EPITAXIAL LAYER BY STACKING FAULTS" @default.
- W2384277923 hasPublicationYear "2010" @default.
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