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- W2384651498 abstract "Bi 1. 5 ZnNb 1. 5 O 7 ( BZN ) ceramic targets were prepared by solid-state reaction technology. BZN thin films were prepared on Pt / SiO 2 / Si ( 100 ) substrates by pulsed laser deposition under different oxygen pressure. The effects of deposition oxygen pressure on microstructure and dielectric properties of BZN thin films also were discussed. The results indicated that the deposited BZN thin films have a pure cubic pyrochlore structure. However , the preferential orientation of BZN films alters with oxygen pressure. Under the oxygen pressure of 10 Pa , thin film shows the strongest preferential orientation of ( 222 ) plane. As the oxygen pressure increasing , dielectric constant of thin film decreased significantly. BZN thin films deposited on the 10 Pa oxygen pressure have the maximum tunability of 5% at 500 kV / cm." @default.
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- W2384651498 date "2012-01-01" @default.
- W2384651498 modified "2023-09-24" @default.
- W2384651498 title "Influence of Deposition Oxygen Pressure on Structure and Dielectric Properties of Bi(1.5)ZnNb(1.5)O7 Thin Films" @default.
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