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- W2384715570 abstract "The purification of silicon was carried out by Si-Fe alloy refining, high temperature quenching and acid leaching, the morphology, structure and purification effect of the silicon were studied. The results indicated that the total removal rate of impurities in the silicon before quenching was 76.82%, and after quenching 96.05%. With the increase of quenching temperature, the removal rate of impurities in silicon material after quenching was raised gradually, the total removal rate of impurities after quenching at 1 007, 1 207 and 1 220 ℃ was 91.87%, 95.19% and 96.05%, respectively. Under the cooling rate of 3 ℃/min, the total removal rate of impurities in silicon material after quenching was 96.05%, however when the cooling rate was 9.5 ℃/min, the total removal rate of impurities after quenching was 94.21%." @default.
- W2384715570 created "2016-06-24" @default.
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- W2384715570 date "2014-01-01" @default.
- W2384715570 modified "2023-09-27" @default.
- W2384715570 title "Purification of Silicon by Si-Fe Alloy Refining-High Temperature Quenching-Acid Leaching Process" @default.
- W2384715570 hasPublicationYear "2014" @default.
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