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- W2385765971 abstract "The working process of the bridge inverter main circuit is analyzed in the paper.The voltage surge of IGBT(Insulated Gate Bipolar Transistor)is caused by the leakage of high frequency transformer,the inductance of absorption circuit,and that FWD(Freewheeling Diodes)can be delayed when IGBT switches off.The proper value of resistance and capacitance of absorption circuit,little leakage of high frequency transformer,and the less inductance of absorption circuit are the effective solutions in suppressing the voltage surge of IGBT." @default.
- W2385765971 created "2016-06-24" @default.
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- W2385765971 date "2006-01-01" @default.
- W2385765971 modified "2023-09-24" @default.
- W2385765971 title "Mechanism Analysis of Voltage Surge on IGBT in Bridge Inverter Main Circuit" @default.
- W2385765971 hasPublicationYear "2006" @default.
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