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- W2385992253 abstract "Anodic bonding of borosilicate glass/silicon was achieved,and the microstructure of the bonding interface was analyzed by SEM and EDX.It indicates that transitional layer was formed at the bonding interface of borosilicate glass/silicon.It is believed that O2-in the depletion of glass drifting to the interface and then reacting with the silicon is the main reason of anodic bonding under the electric field.It is assumed that formation of transitional layer is the essential condition for good bonding between silicon and glass." @default.
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- W2385992253 date "2006-01-01" @default.
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- W2385992253 title "Mechanisms of anodic bonding between borosilicate glass and silicon" @default.
- W2385992253 hasPublicationYear "2006" @default.
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