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- W2386414985 abstract "This paper reports on the fabrication and characteristics of AlGaN/GaN cascode HEMTs grown on sapphire substrates. The circuit described here employs as a common source device with gate length of 0.8 μm cascode connected to a 1 μm common gate device. The second gate bias will remarkably affected saturation current and transconductance and realize power gain control. The cascode device exhibits a slight low f_T of 9 GHz, a decrease feedback, a large increase of maximum available gain and a high impedance compared to those of common source device. Stability test shows that cascode device has much high stability performance which prevent oscillation in circuit application. Such merits combined with high power property of GaN material made AlGaN/GaN cascode device be very suitable for applying it as a based cascode device in the high power, broadband microwave field." @default.
- W2386414985 created "2016-06-24" @default.
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- W2386414985 date "2004-01-01" @default.
- W2386414985 modified "2023-09-25" @default.
- W2386414985 title "AlGaN/GaN Microwave Cascode HEMTs" @default.
- W2386414985 hasPublicationYear "2004" @default.
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