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- W2386529160 abstract "The technological parameters for the Reactive Ion Etching of Si are studied.By controlling variables,we obtain the relation between etching rate and RF power,etching gas pressure,flow of the gas.It is demonstrated that the etching rate increases continually with the increased RF power,that the etching rate initially increases with the increasing gas pressure but decreases after 25Pa,that the etching rate increases with the gas flow at the low flow but decreases after 40sccm.By comparing the different etching results,we also obtain the optimal technological conditions.At last,the etching depth and roughness are measured by the DEKTAK 6M stylus profiler under the optimal technological conditions.The results show that the etching rate is faster and the roughness is lower under the optimal technological conditions." @default.
- W2386529160 created "2016-06-24" @default.
- W2386529160 creator A5025702138 @default.
- W2386529160 date "2006-01-01" @default.
- W2386529160 modified "2023-09-23" @default.
- W2386529160 title "Study on the Technological Parameters for the Reactive Ion Etching of Si" @default.
- W2386529160 hasPublicationYear "2006" @default.
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