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- W2386910822 abstract "As the electron devices develop towards high voltage,high frequency and high current,VDMOS transistors become more and more important.comprehending kinds of models and optimizing the epitaxial layer,the cell structure and sizes of power VDMOS of high voltage are described and a new approach to improve the breakdown voltage is proposed. Based on the theory VDMOS transistors with 500 V breakdown voltage and 3 A conducting current have been successfully fabricated." @default.
- W2386910822 created "2016-06-24" @default.
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- W2386910822 date "2006-01-01" @default.
- W2386910822 modified "2023-09-24" @default.
- W2386910822 title "Study on Power VDMOS of High Voltage" @default.
- W2386910822 hasPublicationYear "2006" @default.
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