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• W2387676872 abstract "We report the first atomic resolution scanning tunneling microscope images of the As-rich (2]4) and Ga-rich (3]2) reconstructions of In x Ga 1~x As/GaAs(0 0 1) films (0.001(x(0.012) grown by metalorganic vapor-phase epitaxy. The (2]4) phase was obtained during annealing the sample at 480iC in an ultrahigh vacuum chamber. Annealing the (2]4) surface to 540iC produced the (3]2) phase which consists of single rows running parallel to the [1 1 0] direction with a spacing of 12 A_ . The rows vary in length, being separated by defects which contain As dimers. A model is proposed for the (3]2) which consists of rows of Ga dimers alternating between the first and third layers. Since this structure exhibits a deficient of one electron, defects are required to expose As dimers in the second layer and neutralize the surface charge. ( 1998 Published by Elsevier Science B.V. All rights reserved." @default.
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• W2387676872 date "1998-06-01" @default.
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• W2387676872 title "Atomic structure of InxGa1−xAs/GaAs(001) (2×4) and (3×2) surfaces" @default.
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• W2387676872 doi "https://doi.org/10.1016/s0304-3991(97)00161-7" @default.
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