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- W2387804865 abstract "Mask selection and lateral etching control in Si deep etching process technology are studied.Experimental results show that higher selectivity can be achieved when fluorine-based gas is used as processing gas and Al or Al alloys are introduced as mask layers.And isotropic etching can be achieved by increasing RF power,changing the gas composition and flow." @default.
- W2387804865 created "2016-06-24" @default.
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- W2387804865 date "2004-01-01" @default.
- W2387804865 modified "2023-09-25" @default.
- W2387804865 title "A Study on Silicon Deep Etching Technology" @default.
- W2387804865 hasPublicationYear "2004" @default.
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