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- W2388270147 abstract "In the high/low voltage compatible LDMOS process, it is more difficult to design drift region parameters of LDMOSFET's. The sensitivity of drift region parameters of LDMOSFET's, such as the drift region length, junction depth, concentration, etc., has been analyzed. Effects of each parameter on the breakdown voltage and on-resistance are discussed. Based on the analysis, an improved structure of drift region with a p-buffer is developed. Results from simulation show that the proposed structure can improve the breakdown voltage by 27% and reduce the on-resistance by 10%." @default.
- W2388270147 created "2016-06-24" @default.
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- W2388270147 date "2004-01-01" @default.
- W2388270147 modified "2023-09-24" @default.
- W2388270147 title "A Sensitivity Analysis of Drift Region Parameters of LDMOSFET's" @default.
- W2388270147 hasPublicationYear "2004" @default.
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