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- W2390010003 abstract "Ge nanocrystal memory device can be programmed at a relatively low voltage and high speed.This research studies charge storage characterization of non-volatile memory metal insulator silicon(MIS)structures with Ge nanocrystal floating gate.The MIS structure containing Al2O3 control gate,a Ge nanocrystal-embedded Al2O3 dielectric and a Al2O3 tunnel oxide layer,was fabricated by electron-beam evaporation method.Capacitance-voltage(C-V)measurements at 1 MHz revealed promising electrical characteristics of the MIS structure.The flat-band voltage shift(ΔVFB)is 0.96V and relatively high stored charge density(Nt)of 4.17×1012 cm-2 is achieved.ΔVFB and Nt become small when the frequency varies from 1kHz to 1MHz.They also decrease when the voltage scan velocity degrades." @default.
- W2390010003 created "2016-06-24" @default.
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- W2390010003 date "2007-01-01" @default.
- W2390010003 modified "2023-09-27" @default.
- W2390010003 title "Charge storage characteristics for Ge nanocrystal floating gate memory" @default.
- W2390010003 hasPublicationYear "2007" @default.
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