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- W2390166596 abstract "Hydrogenated microcrystalline silicon-germanium films(μc-SiGe∶ H) were prepared by radio frequency plasma-enhanced chemical vapor deposition(RF-PECVD) using SiH 4-GeH 4 gas mixture at the growth temperature of 200 ℃.The effect of helium and hydrogen dilution on the film photoelectric and structural properties of μc-Si 1-x Ge x:H were studied.As the He flow rate increasing,the H contents of the films decreased while Ge contents keep constant.The FTIR,XRD,AFM and photo/dark conductivity measurements together indicated that high quality μc-SiGe∶ H thin film with dense micro-structure,low defect states density and optimum optoelectronic property is achieved with a helium and hydrogen dilution ratio of 36%.The possible effects of helium dilution on the growth process and properties of μc-SiGe∶ H thin film were discussed." @default.
- W2390166596 created "2016-06-24" @default.
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- W2390166596 date "2013-01-01" @default.
- W2390166596 modified "2023-09-24" @default.
- W2390166596 title "Influence of Helium and Hydrogen Mixture Dilution on the Structural Properties of Microcrystalline Silicon-germanium Films" @default.
- W2390166596 hasPublicationYear "2013" @default.
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