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- W2391378667 abstract "Low- aluminium In1- xAlxSb film is growth and optimized by molecular beam epitaxial method. After a series of In1- xAlxSb films were grown on InSb( 100) substrate under different conditions,the thermal deoxidation characterization of the substrate and the low- aluminium component control( approximate 2%) were analyzed,and the effect of process parameters such as annealing and InSb buffer layer optimization etc on morphology and quality of the film was discussed. The test results show the quality of the film has a great improvement." @default.
- W2391378667 created "2016-06-24" @default.
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- W2391378667 date "2014-01-01" @default.
- W2391378667 modified "2023-09-26" @default.
- W2391378667 title "MBE growth and optimization of low Al component In_(1-x)Al_xSb film" @default.
- W2391378667 hasPublicationYear "2014" @default.
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