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• W2394603671 abstract "ABSTRACTNi-P thin films are deposited on silicon wafer by electroless method and treated by different annealing processes. The structure of as-deposited film exhibits the mixture of amorphous and microcrystalline phases, and the Ms is 150 emu/cc and Hc is 24 Oe. Rapid thermal annealing (RTA) could avoids the impurity and the Ms of the sample reached the maximum value about 413 emu/cc after RTA process at 350°C. A magnetic field about 5000 Oe was applied during RTA process, which resulted in higher crystallization temperature, higher value of Ms and lower value of Hc." @default.
• W2394603671 created "2016-06-24" @default.
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• W2394603671 date "2016-03-23" @default.
• W2394603671 modified "2023-09-23" @default.
• W2394603671 title "Effect of rapid magnetic field annealing in vacuum on the structure and magnetic properties of Ni-P films" @default.
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• W2394603671 doi "https://doi.org/10.1080/10584587.2016.1165979" @default.
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