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- W2394746897 abstract "The catalyst-free metal organic vapor phase epitaxial growth of InAs nanowires on silicon (001) substrates is investigated by using selectively grown InP/GaAs buffer layers in V-grooved trenches. A strain-driven mechanism of self-aligned 〈112〉 direction InAs nanowires growing is proposed and demonstrated by the transmission electron microscopy measurement. The morphology of InAs nanowires is tapered in diameter and exhibits a hexagonal cross-section. The defect-free InAs nanowire shows a pure zinc blende crystal structure and an epitaxial relationship with InP buffer layer." @default.
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- W2394746897 date "2016-09-01" @default.
- W2394746897 modified "2023-10-07" @default.
- W2394746897 title "Strain-driven synthesis of 〈112〉 direction InAs nanowires in V-grooved trenches on Si using InP/GaAs buffer layers" @default.
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- W2394746897 doi "https://doi.org/10.1016/j.jcrysgro.2016.05.036" @default.
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