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• W2395666553 abstract "Abstract The directed self-assembly (DSA) of block co-polymers (BCPs) can realize next-generation lithography for semiconductors and a variety of soft materials. It is imperative to simultaneously achieve many requirements such as a high resolution, orientation control of micro-domains, etch selectivity, rapid and mild annealing, a low cost and compatibility with manufacturing for developing suitable BCPs. Here, we describe a new design for modified polysiloxane-based BCPs targeted for sub-10-nm-wide lines, which are able to form perpendicularly oriented lamellar structures in thin films. The hydroxyl groups in the side chains introduced in the polysiloxane block provide a good balance with the polystyrene surface free energy, thereby leading to the perpendicular orientation. Moreover, this orientation can be completed in only one minute at 130 °C in an air atmosphere. Oxygen plasma etching for the thin films results in the achievement of a line width of 8.5 nm." @default.
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• W2395666553 date "2016-01-19" @default.
• W2395666553 modified "2023-10-16" @default.
• W2395666553 title "Perpendicularly oriented sub-10-nm block copolymer lamellae by atmospheric thermal annealing for one minute" @default.
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• W2395666553 doi "https://doi.org/10.1038/srep19481" @default.
• W2395666553 hasPubMedCentralId "https://www.ncbi.nlm.nih.gov/pmc/articles/4726028" @default.
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