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- W2396352168 abstract "A model for the poly-CdSe TFT is proposed, based on recent understandings of the behaviour of polycrystalline semiconductors. The importance of adsorbed oxygen in CdSe films and the role of donor metals is highlighted. The model also explains the formation of metal ohmic contacts on CdSe by low temperature annealing." @default.
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- W2396352168 date "1995-01-01" @default.
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- W2396352168 title "Modelling poly-CdSe TFTs for AMLCD" @default.
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