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- W239635681 abstract "GaN thin films were deposited in a self-limiting fashion at low temperatures. Films were deposited on Si substrates by plasma-enhanced atomic layer deposition using trimethylgallium (TMG) or triethylgallium (TEG) as the group-III, and ammonia (NH3) as the group-V precursors. TMG and TEG saturations were observed at 185 and 150 ◦C, for doses starting from 0.015 and 1 s, respectively. Constant deposition rates of ≈ 0.51 and ≈ 0.48 A/cycle were obtained within the temperature ranges of 250–350 and 150–350 ◦C for TMGand TEG-based plasma-enhanced atomic layer deposition processes. Oxygen contents of the films were high (≈ 20 at.%) as determined by X-ray photoelectron spectroscopy." @default.
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- W239635681 date "2011-12-01" @default.
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- W239635681 title "Self-Limiting Growth of GaN at Low Temperatures" @default.
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- W239635681 doi "https://doi.org/10.12693/aphyspola.120.a-55" @default.
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