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• W2397392764 endingPage "064301" @default.
• W2397392764 startingPage "064301" @default.
• W2397392764 abstract "Abstract For SiC metal–oxide–semiconductor field-effect transistors (MOSFETs), it has been shown that unidentified positive mobile ions are generated in SiO 2 after conventional hydrogen annealing, which leads to significant reliability degradation known as bias temperature instability (BTI). Discovering the origin of these mobile ions is important for fabricating highly reliable SiC MOSFETs. On the basis of first-principles calculations, we verified that the BTI of SiC MOSFETs is caused by hydrogen ions combining with CO 3 -like defects in SiO 2 . These hydrogen ions dissociate from the CO 3 -like defects and diffuse “as protons” in SiO 2 . These results indicate that the observed positive mobile ions are protons." @default.
• W2397392764 created "2016-06-24" @default.
• W2397392764 creator A5000177152 @default.
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• W2397392764 date "2016-05-16" @default.
• W2397392764 modified "2023-09-27" @default.
• W2397392764 title "Origin of the unidentified positive mobile ions causing the bias temperature instability in SiC MOSFETs and their diffusion process" @default.
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• W2397392764 doi "https://doi.org/10.7567/apex.9.064301" @default.
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